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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 IXFH 13 N100 ID25 RDS(on) 1000 V 10 A 1.20 W 1000 V 12 A 1.05 W 1000 V 12.5 A 0.90 W trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 10N100 12N100 13N100 10N100 12N100 13N100 10N100 12N100 13N100 Maximum Ratings 1000 1000 20 30 10 12 12.5 40 48 50 10 12 12.5 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A A A A mJ V/ns W C C C C TO-247 AD (IXFH) TO-204 AA (IXFM) EAR dv/dt PD TJ TJM Tstg TL Md Weight TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C D G = Gate, S = Source, G D = Drain, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Features q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Applications q DC-DC converters q Synchronous rectification q Battery chargers q Switched-mode and resonant-mode power supplies q DC choppers q AC motor control q Temperature and lighting controls q Low voltage relays Advantages q Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) q Space savings q High power density 91531F(4/99) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.0 4.5 100 TJ = 25C TJ = 125C 250 1 1.20 1.05 0.90 V V nA mA mA W W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 10N100 12N100 13N100 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-4 IXFH 10N100 IXFH 12N100 IXFH 13N100 IXFM 10N100 IXFM 12N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 10 4000 VGS = 0 V, VDS = 25 V, f = 1 MHz 310 70 21 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 W (External), 33 62 32 122 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 30 50 50 50 100 50 155 45 80 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXFH) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Source-Drain Diode Symbol IS Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10N100 12N100 13N100 10N100 12N100 13N100 10 12 12.5 40 48 50 1.5 A A A A A A V J K L M N 1.5 2.49 TO-204 AA (IXFM) Outline ISM Repetitive; pulse width limited by TJM VSD t rr QRM IRM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS -di/dt = 100 A/ms, VR = 100 V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C 1 2 10 15 250 400 ns ns mC mC A A Dim. A B C D E F G H J K Q R Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90 Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 10N100 IXFH 12N100 IXFH 13N100 IXFM 10N100 IXFM 12N100 Fig. 1 Output Characteristics 20 18 16 14 12 10 8 6 4 2 0 5V TJ = 25C VGS = 10V 7V 6V Fig. 2 Input Admittance 20 18 16 14 12 10 8 6 4 2 0 TJ = 25C ID - Amperes 0 5 10 15 20 ID - Amperes 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VGS - Volts Fig. 3 1.5 RDS(on) vs. Drain Current 2.50 Fig. 4 Temperature Dependence of Drain to Source Resistance TJ = 25C 1.4 2.25 RDS(on) - Normalized RDS(on) - Normalized 2.00 1.75 1.50 1.25 1.00 0.75 ID = 6A 1.3 1.2 1.1 1.0 0.9 0 5 10 15 20 25 VGS = 10V VGS = 15V 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 20 18 16 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 1.1 VGS(th) BVDSS BV/VG(th) - Normalized 25 50 75 100 125 150 ID - Amperes 14 12 10 8 6 4 2 0 -50 1.0 0.9 0.8 0.7 0.6 12N100 10N100 -25 0 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXFH 10N100 IXFH 12N100 IXFH 13N100 IXFM 10N100 IXFM 12N100 Fig.7 Gate Charge Characteristic Curve 10 9 8 7 VDS = 500V ID = 6A IG = 10mA 10s 10 Limited by RDS(on) 100s 1ms 6 5 4 3 2 1 0 0 25 50 75 100 125 150 ID - Amperes VGS - Volts 1 10ms 100ms 0.1 1 10 100 1000 Gate Charge - nCoulombs VDS - Volts Fig.8 Capacitance Curves 4500 4000 Ciss Fig.9 Source Current vs. Source to Drain Voltage 20 18 16 14 12 10 8 6 4 2 0 0.0 TJ = 125C Capacitance - pF 3500 f = 1MHz VDS = 25V 2500 2000 1500 1000 500 0 0 5 Coss Crss ID - Amperes 3000 TJ = 25C 10 15 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VDS - Volts VSD - Volts Fig.10 Transient Thermal Impedance 1 Thermal Response - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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